JPS627149B2 - - Google Patents
Info
- Publication number
- JPS627149B2 JPS627149B2 JP53135745A JP13574578A JPS627149B2 JP S627149 B2 JPS627149 B2 JP S627149B2 JP 53135745 A JP53135745 A JP 53135745A JP 13574578 A JP13574578 A JP 13574578A JP S627149 B2 JPS627149 B2 JP S627149B2
- Authority
- JP
- Japan
- Prior art keywords
- powder
- sintered material
- cutting
- volume
- present
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Ceramic Products (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13574578A JPS5562858A (en) | 1978-11-06 | 1978-11-06 | Sintering material with tenacity and abrasion resistance |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13574578A JPS5562858A (en) | 1978-11-06 | 1978-11-06 | Sintering material with tenacity and abrasion resistance |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5562858A JPS5562858A (en) | 1980-05-12 |
JPS627149B2 true JPS627149B2 (en]) | 1987-02-16 |
Family
ID=15158875
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13574578A Granted JPS5562858A (en) | 1978-11-06 | 1978-11-06 | Sintering material with tenacity and abrasion resistance |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5562858A (en]) |
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8861247B2 (en) | 2009-04-27 | 2014-10-14 | Micron Technology, Inc. | Techniques for providing a direct injection semiconductor memory device |
US8947965B2 (en) | 2009-07-27 | 2015-02-03 | Micron Technology Inc. | Techniques for providing a direct injection semiconductor memory device |
US8964479B2 (en) | 2010-03-04 | 2015-02-24 | Micron Technology, Inc. | Techniques for sensing a semiconductor memory device |
US8982633B2 (en) | 2009-05-22 | 2015-03-17 | Micron Technology, Inc. | Techniques for providing a direct injection semiconductor memory device |
US9019759B2 (en) | 2010-03-15 | 2015-04-28 | Micron Technology, Inc. | Techniques for providing a semiconductor memory device |
US9019788B2 (en) | 2008-01-24 | 2015-04-28 | Micron Technology, Inc. | Techniques for accessing memory cells |
US9064730B2 (en) | 2009-03-04 | 2015-06-23 | Micron Technology, Inc. | Techniques for forming a contact to a buried diffusion layer in a semiconductor memory device |
US9093311B2 (en) | 2009-03-31 | 2015-07-28 | Micron Technology, Inc. | Techniques for providing a semiconductor memory device |
US9240496B2 (en) | 2009-04-30 | 2016-01-19 | Micron Technology, Inc. | Semiconductor device with floating gate and electrically floating body |
US9257155B2 (en) | 2007-05-30 | 2016-02-09 | Micron Technology, Inc. | Integrated circuit having voltage generation circuitry for memory cell array, and method of operating and/or controlling same |
US9263133B2 (en) | 2011-05-17 | 2016-02-16 | Micron Technology, Inc. | Techniques for providing a semiconductor memory device |
US9276000B2 (en) | 2007-03-29 | 2016-03-01 | Micron Technology, Inc. | Manufacturing process for zero-capacitor random access memory circuits |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5626771A (en) * | 1979-08-14 | 1981-03-14 | Sumitomo Electric Industries | Sintered body for cast iron cutting tool and its manufacture |
JPS5860678A (ja) * | 1981-10-02 | 1983-04-11 | 三菱マテリアル株式会社 | 切削および耐摩耗工具用高靭性窒化硼素基超高圧焼結材料 |
JPH07100628B2 (ja) * | 1987-11-18 | 1995-11-01 | 昭和電工株式会社 | 立方晶窒化ほう素焼結体の製造方法 |
CN113896537B (zh) * | 2021-12-10 | 2022-02-22 | 山东金鸿新材料股份有限公司 | 一种碳化硼与碳化硅复合陶瓷的制备方法 |
-
1978
- 1978-11-06 JP JP13574578A patent/JPS5562858A/ja active Granted
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9276000B2 (en) | 2007-03-29 | 2016-03-01 | Micron Technology, Inc. | Manufacturing process for zero-capacitor random access memory circuits |
US9257155B2 (en) | 2007-05-30 | 2016-02-09 | Micron Technology, Inc. | Integrated circuit having voltage generation circuitry for memory cell array, and method of operating and/or controlling same |
US9019788B2 (en) | 2008-01-24 | 2015-04-28 | Micron Technology, Inc. | Techniques for accessing memory cells |
US9064730B2 (en) | 2009-03-04 | 2015-06-23 | Micron Technology, Inc. | Techniques for forming a contact to a buried diffusion layer in a semiconductor memory device |
US9093311B2 (en) | 2009-03-31 | 2015-07-28 | Micron Technology, Inc. | Techniques for providing a semiconductor memory device |
US8861247B2 (en) | 2009-04-27 | 2014-10-14 | Micron Technology, Inc. | Techniques for providing a direct injection semiconductor memory device |
US9240496B2 (en) | 2009-04-30 | 2016-01-19 | Micron Technology, Inc. | Semiconductor device with floating gate and electrically floating body |
US8982633B2 (en) | 2009-05-22 | 2015-03-17 | Micron Technology, Inc. | Techniques for providing a direct injection semiconductor memory device |
US8964461B2 (en) | 2009-07-27 | 2015-02-24 | Micron Technology, Inc. | Techniques for providing a direct injection semiconductor memory device |
US8947965B2 (en) | 2009-07-27 | 2015-02-03 | Micron Technology Inc. | Techniques for providing a direct injection semiconductor memory device |
US8964479B2 (en) | 2010-03-04 | 2015-02-24 | Micron Technology, Inc. | Techniques for sensing a semiconductor memory device |
US9019759B2 (en) | 2010-03-15 | 2015-04-28 | Micron Technology, Inc. | Techniques for providing a semiconductor memory device |
US9263133B2 (en) | 2011-05-17 | 2016-02-16 | Micron Technology, Inc. | Techniques for providing a semiconductor memory device |
Also Published As
Publication number | Publication date |
---|---|
JPS5562858A (en) | 1980-05-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4647546A (en) | Polycrystalline cubic boron nitride compact | |
US20040018108A1 (en) | Method of producing an abrasive product containing cubic boron nitride | |
JPS627149B2 (en]) | ||
JPS6225631B2 (en]) | ||
JPS5857502B2 (ja) | 靭性および耐摩耗性を有する焼結材料 | |
JP2691048B2 (ja) | 工具用焼結材料 | |
JP3146803B2 (ja) | 耐摩耗性に優れた立方晶窒化ほう素基超高圧焼結材料の製造方法 | |
JPS6141873B2 (en]) | ||
JPS6143312B2 (en]) | ||
JPS6114110B2 (en]) | ||
JPS5917181B2 (ja) | 靭性および耐摩耗性を有する焼結材料 | |
JPS6246510B2 (en]) | ||
JPS5935423B2 (ja) | 立方晶窒化硼素含有の切削工具用焼結材料 | |
JPS6137221B2 (en]) | ||
JPS60187659A (ja) | 切削工具用立方晶窒化硼素基超高圧焼結材料 | |
JPS5917180B2 (ja) | 靭性および耐摩耗性を有する焼結材料 | |
JPH0215515B2 (en]) | ||
JPS62877B2 (en]) | ||
JPS6225632B2 (en]) | ||
JP2691049B2 (ja) | 工具用焼結材料 | |
JPS5861256A (ja) | 切削および耐摩耗工具用高靭性窒化硼素基超高圧焼結材料 | |
JPS638072B2 (en]) | ||
JPS5929666B2 (ja) | 靭性および耐摩耗性にすぐれた切削工具用焼結材料 | |
JPS639009B2 (en]) | ||
JPS60145351A (ja) | 切削工具用立方晶窒化硼素基超高圧焼結材料 |